In addition to its DRAM (Dynamic Random Access Memory) chip facility, Samsung has decided to invest three billion won in building a 300-millimeter wafer semiconductor fab in Austin, US, with planned operation in late 2006. This is the largest investment Samsung has ever made. With this production line, Samsung expects to boost its global NAND (Not And) market share. In November, Samsung is likely to sign an MoU with the Austin city government, which has been reported to offer incentives worth US$58.5 million over the next 20 years.